3/6/8-inch PZT piezoelectric wafer
- Orientation: (100)
- PZT thickness: 1-3 μ m
- Uniformity: ± 4%
- Sedimentation rate: 4 μ m/h
- |e31, f|：12-15C/m2
- d33：300pC/N
- Stress: ＜ 80Mpa
- Breakdown electric field: 80V/μ m
- Dielectric constant: 800-1200
- Dielectric loss: 3%
- Substrate: Si/SOI/Glass
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